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TOSHIBA
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Part No. |
TPCP8207
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OCR Text |
...l gate charge : q sw = 4.7 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 29.1 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 40 v) (5) enhancement mode: v th = 2 to 3 v (v ds = 10 v, i d =... |
Description |
Power MOSFET (N-ch dual)
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File Size |
239.03K /
9 Page |
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it Online |
Download Datasheet |
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Part No. |
C488T541
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OCR Text |
...cteristics parameter symbol min typ max unit dc power supply voltage v cc 4.75 5.0 5.25 v dc power supply current i cc 350 500 ma dc negative supply voltage v ee C5.46 C5.2 C4.94 v dc negative supply current i cc 250 m... |
Description |
TRANSMITTER, DFO
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File Size |
199.62K /
10 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
TPHR9003NL
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OCR Text |
...all gate charge: q sw = 16 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 1.1 m ? (typ.) (v gs = 4.5 v) (4) low leakage current: i dss = 10 a (max) (v ds = 30 v) (5) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i ... |
Description |
Power MOSFET (N-ch single VDSS≤30V)
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File Size |
229.59K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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