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Vishay Semiconductors
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| Part No. |
VLMY322U1V2-GS08 VLMO322U1V2-GS08
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| OCR Text |
...st condition part symbol min. typ. max. unit luminous intensity 1) i f = 50 ma vlmy322u1v2 i v 450 750 1125 mcd dominant wavelength i f = 50 ma ? d 582 588 594 nm spectral bandwidth at 50 % i rel max. i f = 50 ma ?? 18 nm angle of ha... |
| Description |
Visible LED, SINGLE COLOR LED, YELLOW, 2.4 mm, ROHS COMPLIANT, PLASTIC, SMD, LCC-4
Visible LED, SINGLE COLOR LED, SOFT ORANGE, 2.4 mm, ROHS COMPLIANT, PLASTIC, SMD, LCC-4
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| File Size |
221.37K /
12 Page |
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UTC
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| Part No. |
UTCCD4069
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| OCR Text |
...high noise immunity: 0.45 v dd typ. * low power ttl compatibility: fan out of 2 driving 74l or 1 driving 74ls. dip-14 sop-14 pin configuration 1234567 14 13 12 11 10 9 v ss 8 v dd block diagram v dd v in v out vs... |
| Description |
Inverter Circuits
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| File Size |
147.33K /
5 Page |
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TOSHIBA
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| Part No. |
TPN7R506NH
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| OCR Text |
...ll gate charge: q sw = 9.2 nc (typ.) (3) low drain-source on-resistance: r ds(on) = 6.0 m ? (typ.) (v gs = 10 v) (4) low leakage current: i dss = 10 a (max) (v ds = 60 v) (5) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
237.68K /
9 Page |
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TOSHIBA
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| Part No. |
TPC6130
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| OCR Text |
...esistance: r ds(on) = 86 m ? (typ.) (v gs = -4.5 v) (3) low leakage current: i dss = -10 a (max) (v ds = -20 v) (4) enhancement mode: v th = -0.5 to -1.2 v (v ds = -10 v, i d = -0.2 ma) 3. 3. 3. 3. packaging and internal circu... |
| Description |
Power MOSFET (P-ch single)
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| File Size |
221.81K /
9 Page |
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TOSHIBA
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| Part No. |
TK70X06K3
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| OCR Text |
...istance: r ds (on) = 6.5 m ? (typ.) ? high forward transfer admittance: |y fs | = 120 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 60 v) ? enhancement mode: v th = 3.0 to 4.0 v (v ds = 10 v, i d = 1 ma) ab... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
209.55K /
6 Page |
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it Online |
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TOSHIBA
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| Part No. |
TK100S04N1L
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| OCR Text |
...sistance: r ds(on) = 1.9 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 40 v) (3) enhancement mode: v th = 1.5 to 2.5 v (v ds = 10 v, i d = 0.5 ma) 3. 3. 3. 3. packaging and internal circuit packa... |
| Description |
Power MOSFET (N-ch single 30V<VDSS≤60V)
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| File Size |
240.21K /
9 Page |
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it Online |
Download Datasheet |
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