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TOSHIBA
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Part No. |
TK72E08N1
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OCR Text |
...sistance: r ds(on) = 3.6 m ? (typ.) (v gs = 10 v) (2) low leakage current: i dss = 10 a (max) (v ds = 80 v) (3) enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packa... |
Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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File Size |
247.10K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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Part No. |
SSM6L35FU
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OCR Text |
...toshiba 2-2j1c weight: 6.8 mg (typ.) 1.source 1 2.gate 1 3.drain 2 4.source 2 5.gate 2 6.drain 1 start of commercial production 2008-03
ssm6l35fu 2014-03-01 2 q1 electrical characteristics (ta = 25c) characteristics... |
Description |
Small-signal MOSFET 2 in 1
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File Size |
233.24K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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