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  -1ghz Datasheet PDF File

For -1ghz Found Datasheets File :: 2945    Search Time::2.547ms    
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    PMA-545

Mini-Circuits
Part No. PMA-545
OCR Text ... Ultra Low Noise: 0.8 dB NF at 1GHz Advantages Industry Leading Noise Figure, measured in a 50 Ohm environment - without any external matching High IP3: Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low Noi...
Description Ultra Low Noise MMIC Amplifier

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    ENA1281

Sanyo Semicon Device
Part No. ENA1281
OCR Text ...Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=17.5dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter ...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifier

File Size 269.81K  /  9 Page

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    ENA1280

Sanyo Semicon Device
Part No. ENA1280
OCR Text ...Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : |S21e|2=17.5dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter ...
Description NPN Epitaxial Planar Silicon Transistor High Frequency Low-Noise Amplifi er

File Size 269.65K  /  9 Page

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    CXA1786N

Sony Corporation
Part No. CXA1786N
OCR Text 1GHz-band PLL IC for Mobile Communications For the availability of this product, please contact the sales office. Descriptions The CXA1786N is a frequency synthesizer PLL IC developed for use in mobile communication systems. This IC has lo...
Description 1.1GHz-band PLL IC for Mobile Communications

File Size 181.78K  /  12 Page

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    ENA1125

Sanyo Semicon Device
Part No. ENA1125
OCR Text ...=10V, f=1MHz VCE=5V, IC=20mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 0.7 5 typ 0.95 1.0 7 0.75 0.5 9 12 8 1.0 1.8 1.2 max Unit mV GHz pF pF dB dB dB NF Note) The specifications shown above are for ea...
Description NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

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    NSVF3007SG3 NSVF3007SG3-17

ON Semiconductor
Part No. NSVF3007SG3 NSVF3007SG3-17
OCR Text ...0 23 57 10 23 57 100 v ce =5v f=1ghz 2 5 7 3 1.0 0.1 3 25 100 0.1 73 257 10 3 257 1.0 f=1mhz 100 a 150 a 200 a 500 a 250 a 300 a 350 a 400 a 450 a nsvf3007sg3 www.onsemi.com 3 ...
Description RF Transistor

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    ZL40800 ZL40800_DCA ZL40800_DCB ZL40802 ZL40802_DCA ZL40802_DCB ZL40802/DCA ZL40802/DCB ZL40800/DCA ZL40800/DCB

Zarlink Semiconductor Inc.
ZARLINK[Zarlink Semiconductor Inc]
Part No. ZL40800 ZL40800_DCA ZL40800_DCB ZL40802 ZL40802_DCA ZL40802_DCB ZL40802/DCA ZL40802/DCB ZL40800/DCA ZL40800/DCB
OCR Text ...ypical Phase Noise 5GHz 3GHz 1GHz Absolute Maximum Ratings Parameter 1 2 3 4 5 Supply voltage RFin All I/O ports ESD protection Storage temperature -0.5 2k -55 +150 Symbol Vcc Min -0.5 Max 6 12 +0.5 Units V dBm V V Mil-std 883B / 3015...
Description 6 GHz Fixed Modulus Prescalers

File Size 402.82K  /  12 Page

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    ENA1115 55GN01SA

Sanyo Semicon Device
Part No. ENA1115 55GN01SA
OCR Text .... High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base ...
Description NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications
   NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

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    NSVF3007SG3T1G

ON Semiconductor
Part No. NSVF3007SG3T1G
OCR Text ...0 23 57 10 23 57 100 v ce =5v f=1ghz 2 5 7 3 1.0 0.1 3 25 100 0.1 73 257 10 3 257 1.0 f=1mhz 100 a 150 a 200 a 500 a 250 a 300 a 350 a 400 a 450 a nsvf3007sg3 www.onsemi.com 3 ...
Description RF Transistor for Low Noise Amplifier

File Size 491.27K  /  10 Page

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