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Diodes
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| Part No. |
ZXTN25100BFHTA
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| OCR Text |
... c esd ratings (note 10) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 8,000 v 3b electrostatic discharge - machine model esd mm 400 v c notes: 5. for a device su... |
| Description |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
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| File Size |
233.60K /
7 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXTP07040DFF ZXTP07040DFFTA
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| OCR Text |
...0 -3 -7 -3 -6 -1 0.84 6.72 1.34 10.72 1.50 12.0 2.0 16.0 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d... |
| Description |
40V, SOT23F, PNP medium power transistor
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| File Size |
406.78K /
6 Page |
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it Online |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE0115K
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| OCR Text |
...ntinuous(t c =100 ) i d (100) 10.6 a pulsed drain current i dm 60 a maximum power dissipation p d 50 w single pulse avalanche energy (note 5) e as 2 00 mj operating junction and st orage temperature range t j ,t stg -... |
| Description |
NCE N-Channel Enhancement Mode Power MOSFET
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| File Size |
422.15K /
7 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
NUP4302MR6T1 NUP4302MR6
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| OCR Text |
...F = 0.1 mAdc IF = 1.0 mAdc IF = 10 mAdc IF = 100 mAdc VR = 0 V, f = 1.0 MHz, I/O to Ground VR = 0 V, f = 1.0 MHz, I/O to I/O IF = IR = 10 mA, IR(REC) = 1.0 mA (Figure 1) Conditions Min 30 30 0.28 0.35 0.45 1.00 28 18 5.0 Typ Max Unit V mA V... |
| Description |
Schottky Diode Array for Four Data Line ESD Protection 肖特基二极管阵列为四条数据线ESD保护
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| File Size |
82.09K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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