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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE6222 NTE5708 NTE5714 NTE5724
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| OCR Text |
.... . . . . . . . . . . . . . . . 1950a NTE6222 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500A Maximum I2t for Fusing (t = 8.3ms), I2t NTE5708 . . . . ... |
| Description |
Powerblock Modules Powerblock模块
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| File Size |
24.02K /
2 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67050-A4127-A001 SIDC56D120E6
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| OCR Text |
... Softness S1 S2
I F =75A di/dt=1950a/ s V R =600V I F =75A di/dt=1950a/ s VR = 6 0 0 V I F =75A di/dt=1950a/ s VR = 6 0 0 V I F =75A di/dt=1950a/ s VR = 6 0 0 V I F =75A di/dt=1950a/ s VR = 6 0 0 V
Conditions Tj = 2 5 C Tj = 1 2 5 C T... |
| Description |
Fast switching diode chip in EMCON-Technology
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| File Size |
63.47K /
4 Page |
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it Online |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE6230 NTE5710 NTE5712 NTE5720 NTE5722 NTE6220
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| OCR Text |
.... . . . . . . . . . . . . . . . 1950a Maximum I2t for Fusing (t = 8.3ms), I2t NTE5710, NTE5711, NTE5712, NTE6220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9350A2sec NTE5720, NTE5721, NTE5722, NTE6230 . . . . . . . . ... |
| Description |
Powerblock Modules Powerblock模块
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| File Size |
47.10K /
2 Page |
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it Online |
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Infineon
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| Part No. |
SIDC56D120E6
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| OCR Text |
...e recovery time t rr2 di/dt=1950a/ m s v r =600v t j =125c ns i rrm1 t j =25c 88.5 peak recovery current i rrm2 i f =75a di/dt=1950a/ m s v r = 600v t j =125c 110 a q rr1 t j =25 c ... |
| Description |
Diodes - HV Chips - SIDC56D120E6, 1200V, 75A
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| File Size |
63.20K /
4 Page |
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it Online |
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CRYDOM CORP
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| Part No. |
EFG14G EFG15E
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| OCR Text |
... 2 cycle, 60hz) 400a 600a 1500a 1950a i 2 t maximum i 2 t for fusing (t=8.3ms) [a 2 sec] 670 1500 9340 15800 i gt maximum required gate current to trigger @ 25 ? c 60ma 80ma 150ma 150ma v gt maximum required gate voltage to trigger ... |
| Description |
3 PHASE, 170 A, 1400 V, SILICON, RECTIFIER DIODE
3 PHASE, 170 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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| File Size |
130.41K /
3 Page |
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it Online |
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CRYDOM CORP
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| Part No. |
EFE14B
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| OCR Text |
...ycle, 60hz) 400a 600a 1500a 1950a i 2 t maximum i 2 t for fusing (t=8.3ms) [a 2 sec] 670 1500 9340 15800 i gt maximum required gate current to t rigger @ 25c 60ma 80ma 150ma 150ma v gt maximum required gat... |
| Description |
3 PHASE, 100 A, 400 V, SILICON, RECTIFIER DIODE
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| File Size |
286.02K /
5 Page |
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HERLEY NEW YORK
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| Part No. |
D1958-58
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| OCR Text |
... application notes *model 1950a is a special-order product. consult facto ry before ordering. (1) specifications for the extended frequency ranges are typical. (2) except from 16 - 18 ghz where insertion loss is 4.0 db max and v... |
| Description |
6000 MHz - 18000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 3 dB INSERTION LOSS-MAX
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| File Size |
200.15K /
2 Page |
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it Online |
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