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  jfet Datasheet PDF File

For jfet Found Datasheets File :: 2102    Search Time::1.407ms    
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    MC33171 MC33171P MC33172D MC33172P MC33174P MC33172 MC33174 MC33174D ON0979 MC33171D

ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
Part No. MC33171 MC33171P MC33172D MC33172P MC33174P MC33172 MC33174 MC33174D ON0979 MC33171D
OCR Text .../s slew rate without the use of jfet device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common mode input voltage includes ground potential (VEE). Wi...
Description From old datasheet system
Low Power Single Supply Operational Amplifiers
PIN CONNECTIONS
Low Power, Single Supply Operational Amplifiers

File Size 215.20K  /  12 Page

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    MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON2098

MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON2098
OCR Text jfet Switching Transistors N-Channel 2 SOURCE 3 GATE MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 3 1 1 DRAIN MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Symbol VDS VDG VGS IG(...
Description From old datasheet system
CASE 3188, STYLE 10 SOT3 (TO?36AB
jfet Switching Transistors

File Size 137.40K  /  6 Page

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    OP249 OP249ARC_883 OP249AZ OP249EJ OP249FZ OP249GP OP249GS OP249GS-REEL OP249GS-REEL7

AD[Analog Devices]
Part No. OP249 OP249ARC_883 OP249AZ OP249EJ OP249FZ OP249GP OP249GS OP249GS-REEL OP249GS-REEL7
OCR Text jfet High Speed Operational Amplifier OP249 PIN CONNECTIONS 8-Lead Cerdip (Z Suffix), 8-Lead Plastic Mini-DIP (P Suffix) OUT A 1 -IN A 2 +IN A 3 V- 4 8 V+ A B 7 OUT B -+ +- 6 -IN B FEATURES Fast Slew Rate: 22 V/ s typ Settling Time (0...
Description Dual, Precision jfet High Speed Operational Amplifier

File Size 687.35K  /  17 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Fast Recovery Body Diode * Lower Leakage * Faster...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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    APT5010B2VR APT5010B2VRG

ADPOW[Advanced Power Technology]
Advanced Power Technolo...
Part No. APT5010B2VR APT5010B2VRG
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. T-MAXTM * Faster Switching * Lower Leakage * 10...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
New T-MAX?Package (Clip-mounted TO-247 Package)

File Size 61.66K  /  4 Page

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    APT5010JVFR

ADPOW[Advanced Power Technology]
Part No. APT5010JVFR
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.63K  /  4 Page

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    APT5010JVRU2

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU2
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. SO 2 T- 27 "UL Recognized" ISOTOP(R) ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 110.72K  /  7 Page

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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. SO 2 T- 27 "UL Recognized" ISOTOP(R) ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" ...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT5010LVFR APT20M22LVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5010LVFR APT20M22LVFR
OCR Text ...is new technology minimizes the jfet effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Fast Recovery Body Diode * Lower Leakage * Faster...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 47A 0.100 Ohm

File Size 66.12K  /  4 Page

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For jfet Found Datasheets File :: 2102    Search Time::1.407ms    
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