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    MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D

ON Semiconductor
Motorola, Inc
Part No. MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D
Description TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

File Size 219.23K  /  8 Page

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HUA FENG CIRCUIT





    PHD2N60E PHP2N60E PHB2N60E

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD2N60E PHP2N60E PHB2N60E
Description PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 93.93K  /  10 Page

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