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				ONSEMI[ON Semiconductor]
Part No.	2N6505 2N6507 2N6509 2N6504 2N6508 2N6504/D
OCR Text	...iformity and Stability * Small, rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability * Blocking Voltage to 800 Volts * 300 A Surge Current Capability * Device Marking: Logo, Device Type, e.g., 2N65...
Description	5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 Silicon Controlled Rectifiers
File Size	50.94K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-10100 ATF-10100-GP3
OCR Text	...nd nitride passivation assure a rugged, reliable device. Chip Outline G G S D S Description The ATF-10100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor Electrical Specifications...
Description	0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	46.17K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10136 ATF-10136-STR ATF-10136-TR1 ATF10136
OCR Text	...nd nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GH...
Description	ER 3C 3#16 PIN RECP BOX 0.5-12 GHz Low Noise Gallium Arsenide FET
File Size	41.86K / 3 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236
OCR Text	...nd nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GH...
Description	ER 2C 2#16S PIN RECP BOX 0.5?12 GHz Low Noise Gallium Arsenide FET 0.5-12 GHz Low Noise Gallium Arsenide FET 0.512 GHz Low Noise Gallium Arsenide FET
File Size	42.09K / 3 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
Part No.	ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TRI ATF10736
OCR Text	...nd nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GH...
Description	0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
File Size	44.24K / 4 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	ATF-13100 ATF-13100-GP3
OCR Text	...nd nitride passivation assure a rugged, reliable device. The recommended mounting procedure is to die attach at a stage temperature of 300C using a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bond...
Description	2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
File Size	38.39K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text	...nd nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14....
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	41.75K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text	...nd nitride passivation assure a rugged, reliable device. Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz f = 12.0 GHz f = 14.0 GHz f = 8.0 GHz f = ...
Description	2-16 GHz Low Noise Gallium Arsenide FET
File Size	44.11K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Agilent (Hewlett-Packard) ETC[ETC] HP[Agilent(Hewlett-Packard)] List of Unclassifed Manufacturers
Part No.	ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text	...nd nitride passivation assure a rugged, reliable device. 5-43 5965-8721E ATF-13786 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Pow...
Description	Surface Mount Gallium Arsenide FET for Oscillators
File Size	43.73K / 3 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21170
OCR Text	...nd nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor Electrical Specifications, TA = 25C Symbol NFO ...
Description	0.5-6 GHz Low Noise Gallium Arsenide FET
File Size	41.90K / 3 Page	View it Online	Download Datasheet

For rugged Found Datasheets File :: 12939 Search Time::1.687ms
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